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     BF556B-TAPE-13  BF556B
 entspricht,
ähnlich
  No Data  *BF556B*(1)
beginnt mit   No Data  BF556B*(3) *BF556B *(1)*BF556B,*(1)*BF556BT*(1)
endet mit   No Data   No Data
beinhaltet   No Data   No Data
Hersteller

BF556B-TAPE-13 Hersteller

Suche Teilenummer : entspricht Summe, beginnt mit Summe "BF556B" - Total : 4 ( 1/1 Page)
Hersteller Teilenummer Datenblatt
Date
Size
Bauteilbeschribung Rohs
Pb Free
Lifecycle
Direct Link
NXP Semiconductors
NXP Semiconductors
BF556B Datasheet PDF Image TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal compliant
yes
obsolete
BF556B T/R Datasheet PDF Image N-channel silicon junction field-effect transistors - CRS: 0.8 pF; IDSS: 6 to 13 mA; IG: 10 mA; Kind: DC, LF and HF amplifiers ; -V(P)GS: 0.5 to 7.5 V; VDSmax: 30 V; YFS: 4.5 ms compliant
no
active
Detail Button
BF556B,215 Datasheet PDF Image N-channel FET TO-236 3-Pin compliant

obsolete
BF556BT/R Datasheet PDF Image TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal compliant
unknown
obsolete

1

BF556B Hersteller

Search Partnumber : Start with "BF556B" - Total : 22 ( 1/2 Page)
Hersteller Teilenummer Datenblatt
Date
Size
Bauteilbeschribung Rohs
Pb Free
Lifecycle
Direct Link
NXP Semiconductors
NXP Semiconductors
BF550 Datasheet PDF image TRANSISTOR 25 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SOT-23, 3 PIN, BIP General Purpose Small Signal compliant
yes
transferred
BF550 T/R Datasheet PDF image PNP medium frequency transistor - fT min: 325 MHz; hFE max:>50 ; hFE min: 50 ; IC max: 25 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 40 V compliant
no
active
Detail Button
BF550,215 Datasheet PDF image BF550 - PNP medium frequency transistor TO-236 3-Pin compliant

transferred
Detail Button
Nexperia
Nexperia
BF550,215 Datasheet PDF image BF550 - PNP medium frequency transistor TO-236 3-Pin

active
Detail Button
BF550,215 Datasheet PDF image BF550 - PNP medium frequency transistor TO-236 3-Pin

active
Detail Button
NXP Semiconductors
NXP Semiconductors
BF550,235 Datasheet PDF image BF550 - PNP medium frequency transistor TO-236 3-Pin compliant

transferred
Detail Button
Nexperia
Nexperia
BF550,235 Datasheet PDF image BF550 - PNP medium frequency transistor TO-236 3-Pin

active
Detail Button
BF550,235 Datasheet PDF image BF550 - PNP medium frequency transistor TO-236 3-Pin

active
Detail Button
NXP Semiconductors
NXP Semiconductors
BF550T/R Datasheet PDF image TRANSISTOR 25 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SST3, SMD, 3 PIN, BIP General Purpose Small Signal compliant
unknown
obsolete
BF556A Datasheet PDF image TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal compliant
yes
obsolete
BF556A T/R Datasheet PDF image N-channel silicon junction field-effect transistors - CRS: 0.8 pF; IDSS: 3 to 7 mA; IG: 10 mA; Kind: DC, LF and HF amplifiers ; -V(P)GS: 0.5 to 7.5 V; VDSmax: 30 V; YFS: 4.5 ms compliant
no
active
Detail Button
BF556A,215 Datasheet PDF image N-channel FET TO-236 3-Pin compliant

obsolete
Detail Button
BF556A,235 Datasheet PDF image N-channel FET TO-236 3-Pin compliant

obsolete
Detail Button
BF556AT/R Datasheet PDF image TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal compliant
unknown
obsolete
BF556B T/R Datasheet PDF image N-channel silicon junction field-effect transistors - CRS: 0.8 pF; IDSS: 6 to 13 mA; IG: 10 mA; Kind: DC, LF and HF amplifiers ; -V(P)GS: 0.5 to 7.5 V; VDSmax: 30 V; YFS: 4.5 ms compliant
no
active
Detail Button
BF556B,215 Datasheet PDF image N-channel FET TO-236 3-Pin compliant

obsolete
BF556BT/R Datasheet PDF image TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal compliant
unknown
obsolete
BF556C Datasheet PDF image TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal compliant
yes
obsolete
BF556C T/R Datasheet PDF image N-channel silicon junction field-effect transistors - CRS: 0.8 pF; IDSS: 11 to 18 mA; IG: 10 mA; Kind: DC, LF and HF amplifiers ; -V(P)GS: 0.5 to 7.5 V; VDSmax: 30 V; YFS: 0.5 ms compliant
no
active
Detail Button
BF556C,215 Datasheet PDF image N-channel FET TO-236 3-Pin compliant

obsolete

1 2

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