Hersteller |
Teilenummer |
Datenblatt Date Size |
Bauteilbeschribung |
Rohs Pb Free Lifecycle |
Direct Link |
NXP Semiconductors
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BAS116 T/R
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Low-leakage diode - Cd max.: 2 pF; Configuration: single ; IF max: 215 mA; IFSM max: 4 A; IR max: 5@VR=75V nA; IFRM: 500 mA; trr max: 3000 ns; VFmax: 1@IF=10mA mV; VR max: 75 V
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compliant no active |
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BAS116,215
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BAS116 - Low-leakage diode TO-236 3-Pin
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compliant
transferred |
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Nexperia
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BAS116,215
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BAS116 - Low-leakage diode TO-236 3-Pin
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active |
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BAS116,215
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BAS116 - Low-leakage diode TO-236 3-Pin
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active |
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NXP Semiconductors
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BAS116,235
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BAS116 - Low-leakage diode TO-236 3-Pin
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compliant
transferred |
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Nexperia
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BAS116,235
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BAS116 - Low-leakage diode TO-236 3-Pin
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active |
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BAS116,235
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BAS116 - Low-leakage diode TO-236 3-Pin
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active |
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NXP Semiconductors
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BAS116GWJ
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BAS116GW - Low leakage switching diode
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transferred |
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Nexperia
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BAS116GWJ
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BAS116GW - Low leakage switching diode
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active |
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BAS116GWJ
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BAS116GW - Low leakage switching diode
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active |
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NXP Semiconductors
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BAS116GWX
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BAS116GW - Low leakage switching diode
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transferred |
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Nexperia
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BAS116GWX
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BAS116GW - Low leakage switching diode
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active |
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BAS116GWX
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BAS116GW - Low leakage switching diode
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active |
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NXP Semiconductors
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BAS116H
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0.215A, 85V, SILICON, SIGNAL DIODE, PLASTIC PACKAGE-2
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compliant yes transferred |
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BAS116H T/R
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75 V low leakage diode in small SOD123F package - Cd max.: 2 pF; Configuration: single ; IF max: 215 mA; IFSM max: 4 A; IR max: 5@VR=75V nA; IFRM: 500 mA; trr max: 3000 ns; VFmax: 1@IF=10mA
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compliant no active |
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BAS116H,115
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BAS116H - Low leakage switching diode SOD-123 2-Pin
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compliant
transferred |
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Nexperia
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BAS116H,115
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BAS116H - Low leakage switching diode SOD-123 2-Pin
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active |
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BAS116H,115
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BAS116H - Low leakage switching diode SOD-123 2-Pin
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active |
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ON Semiconductor
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BAS116LT1G
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75 V Switching Diode, SOT-23 (TO-236) 3 LEAD, 3000-REEL
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yes active |
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BAS116LT1G
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75 V Switching Diode, SOT-23 (TO-236) 3 LEAD, 3000-REEL
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yes active |
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